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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1904 DESCRIPTION *With TO-126 package *Complement to type 2SA899 APPLICATIONS *For high frequency power amplification PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 150 150 5 50mA 1 150 -55~150 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=1mA; RBE=9 IC=10A ;IE=0 IE=10A ;IC=0 IC=10mA ;IB=1mA IC=10mA ;IB=1mA VCB=140V; IE=0 VEB=4V; IC=0 IC=10mA ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=10mA ; VCE=5V 35 MIN 150 150 5 2SC1904 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE COB fT TYP. MAX UNIT V V V 0.5 1.0 1 1 500 3 70 V V A A pF MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1904 Fig.2 Outline dimensions 3 |
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